schottky barrier diodes (sbd) 1 publication date: june 2002 skh00118aed MAS3795E silicon epitaxial planar type for high-speed switching circuits features ? high-density mounting is possible ? optimum for high frequency rectification because of its short reverse recovery time (t rr ) ? low forward voltage v f optimum for low voltage rectification v f = < 0.3 v (at i f = 1 ma) ? sss-mini type 3-pin package absolute maximum ratings t a = 25 c parameter symbol rating unit reverse voltage (dc) v r 30 v peak reverse voltage v rm 30 v forward current (dc) single i f 30 ma double 20 peak forward current single i fm 150 ma double 110 junction temperature t j 125 c storage temperature t stg ? 55 to + 125 c electrical characteristics t a = 25 c 3 c internal connection parameter symbol conditions min typ max unit reverse current (dc) i r v r = 30 v 30 a forward voltage (dc) v f1 i f = 1 ma 0.3 v v f2 i f = 30 ma 1.0 terminal capacitance c t v r = 1 v, f = 1 mhz 1.5 pf reverse recovery time * t rr i f = i r = 10 ma 1.0 ns i rr = 1 ma, r l = 100 ? detection efficiency v in = 3 v (peak) , f = 30 mhz 65 % r l = 3.9 k ? , c l = 10 pf bias application unit n-50bu 90% pulse generator (pg-10n) r s = 50 ? wave form analyzer (sas-8130) r i = 50 ? t p = 2 s t r = 0.35 ns = 0.05 i f = 10 ma i r = 10 ma r l = 100 ? 10% input pulse output pulse i rr = 1 ma t r t p t rr v r i f t t a unit: mm 1.20 0.05 0.52 0.03 0 to 0.01 0.15 max. 5 0.15 min. 0.80 0.05 0.15 min. 0.33 (0.40) (0.40) 12 3 5 0.80 0.05 1.20 0.05 +0.05 ?0.02 0.10 +0.05 ?0.02 0.23 +0.05 ?0.02 note) 1. this product is sensitive to electric shock (static electricity, etc.). due attention must be paid on the charge of a hu man body and the leakage of current from the operating equipment. y 2. rated input/output frequency: 2 ghz 3. * : t rr measuring instrument 1: anode 1 2: anode 2 3: cathode 1, 2 sssmini3-f1 package marking symbol: m3 12 3
2 MAS3795E skh00118aed 10 ? 2 0 0.4 0.8 1.2 1.6 2.0 2.4 10 ? 1 1 10 10 2 10 3 forward voltage v f ( v ) forward current i f ( ma ) t a = 125 c ?20 c 75 c 25 c 10 ? 1 0 5 10 15 20 25 30 1 10 10 2 10 3 10 4 reverse voltage v r ( v ) reverse current i r ( a ) t a = 125 c 75 c 25 c 0 0.2 0.4 0.6 0.8 1.0 ? 40 0 40 80 120 160 200 ambient temperature t a ( c ) forward voltage v f ( v ) i f = 30 ma 10 ma 1 ma 10 ? 1 ? 40 0 40 80 120 160 200 1 10 10 2 10 3 10 4 ambient temperature t a ( c ) reverse current i r ( a ) v r = 25 v 3 v 1 v 0 3.0 2.5 2.0 1.5 1.0 0.5 0 5 10 15 20 25 30 reverse voltage v r ( v ) terminal capacitance c t ( pf ) f = 1 mhz t a = 25 c i r ? t a c t ? v r i f ? v f i r ? v r v f ? t a
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